Koch Lab:Protocols/Photolithography: Difference between revisions
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Legend | =Legend= | ||
"->" denotes physically pushing the button on the machine with the text that appears directly after symbol. | |||
=General Outline of process= | =General Outline of process= | ||
| Line 6: | Line 7: | ||
#Expose | #Expose | ||
#Post bake | #Post bake | ||
[[Image:LopezLab Hotplate.jpg|thumb|right|300 px|Hot plate for prebaking]] | |||
=Procedure= | =Procedure= | ||
| Line 11: | Line 13: | ||
*->set | *->set | ||
*->plate temp | *->plate temp | ||
*->" | *->"Desired temp" | ||
**->9 | |||
**->5 | |||
*->ent | *->ent | ||
[[Image:LopezLab Spincoater.jpg|thumb|right|300 px|Spin coater]] | |||
[[Image:LopezLab Compressed Nitrogen.jpg|thumb|right|300 px|Nitrogen knob]] | |||
[[Image:LopezLab UV Exposer.jpg|thumb|right|300 px|UV exposer]] | |||
[[Image:IMG 0020.jpg|thumb|right|300 px|Developing wafer]] | |||
Applying photo resist | Applying photo resist | ||
| Line 27: | Line 36: | ||
#*->center | #*->center | ||
#Manually adjust wafer if needed (repeat previous 2 steps until wafer is centered sufficiently) | #Manually adjust wafer if needed (repeat previous 2 steps until wafer is centered sufficiently) | ||
# | #Poor photo resist on the top side of the wafer | ||
#*->spin | #*->spin | ||
#*->ok | #*->ok | ||
#**NOTE: bubbles on wafer are normal | |||
#Move wafer to hot plate | #Move wafer to hot plate | ||
#*wait 15 minutes | #*wait 15 minutes | ||
| Line 59: | Line 69: | ||
#Turn everything off!!! | #Turn everything off!!! | ||
#Place wafer in glass dish | #Place wafer in glass dish | ||
#*NOTE: It is imperative that glass is used, if a petri dish is used the developer with fuse the wafer to the dish. | |||
#Poor in developer (6 mins) | #Poor in developer (6 mins) | ||
#Take wafer out of developer | #Take wafer out of developer | ||
#*At this point you can spray the wafer with ethanol to remove residual developer | #*At this point you can spray the wafer with ethanol to remove residual developer | ||
#*Can also use Nitrogen gas to blow off fluid/debris from wafer | #*Can also use Nitrogen gas to blow off fluid/debris from wafer | ||
#Dispose of developer in designated bottle under fume hood. | |||
Latest revision as of 15:30, 21 October 2009
Legend
"->" denotes physically pushing the button on the machine with the text that appears directly after symbol.
General Outline of process
- Spin
- Pre bake
- Expose
- Post bake
Procedure
Preheat hotplate for prebaking wafer
- ->set
- ->plate temp
- ->"Desired temp"
- ->9
- ->5
- ->ent
Applying photo resist
- Place wafer on spin coating machine
- ->speed (input speed)
- ->accel (input acceleration)
- ->time (input time)
- ->save->back
- ->run process
- ->load recipe
- ->"file name"
- Manually center wafer by "eyeballing" it (this may take several tries)
- Turn on vacuum pump (manually)
- ->center
- Manually adjust wafer if needed (repeat previous 2 steps until wafer is centered sufficiently)
- Poor photo resist on the top side of the wafer
- ->spin
- ->ok
- NOTE: bubbles on wafer are normal
- Move wafer to hot plate
- wait 15 minutes
- Hook up vacuum hose to UV exposer
- Turn on Nitrogen
- UV exposer
- Pull white lever
- ->start
- wait for 200W
- ->Power
- ->visual align
- Tape mask onto glass (place glass side up)
- ->mask clamp
- Load wafer on tray below
- ->chuck vac
- Push slide in
- ->mask load
- ->visual align
- ->wafer load
- ->cont (pushes wafer against mask)
- Set time
- ->manual expose
- ->chuck vac
- remove wafer
- Post bake (5 mins)
- ->mask load
- ->mask clamp
- Take off slide
- Turn everything off!!!
- Place wafer in glass dish
- NOTE: It is imperative that glass is used, if a petri dish is used the developer with fuse the wafer to the dish.
- Poor in developer (6 mins)
- Take wafer out of developer
- At this point you can spray the wafer with ethanol to remove residual developer
- Can also use Nitrogen gas to blow off fluid/debris from wafer
- Dispose of developer in designated bottle under fume hood.
